Transistor - FET, MOSFET - Bujang | Produk Semikonduktor Diskrit | 21

SSM3K344R,LF

bahagian bahagian: 172502

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 71 mOhm @ 3A, 4.5V,

Senarai harapan

Toshiba Semiconductor and Storage

SSM5N15FU,LF

bahagian bahagian: 145407

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4V, Rds On (Maks) @ Id, Vgs: 4 Ohm @ 10mA, 4V,

Senarai harapan

Toshiba Semiconductor and Storage

TJ15P04M3,RQ(S

bahagian bahagian: 165753

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 36 mOhm @ 7.5A, 10V,

Senarai harapan

Toshiba Semiconductor and Storage

TPN2R805PL,L1Q

bahagian bahagian: 7504

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 45V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 139A (Ta), 80A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 2.8 mOhm @ 40A, 10V,

Senarai harapan

Toshiba Semiconductor and Storage

TK50P03M1(T6RSS-Q)

bahagian bahagian: 196259

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 50A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 7.5 mOhm @ 25A, 10V,

Senarai harapan

Toshiba Semiconductor and Storage

TPN11003NL,LQ

bahagian bahagian: 185923

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 11 mOhm @ 5.5A, 10V,

Senarai harapan

Toshiba Semiconductor and Storage

SSM6K514NU,LF

bahagian bahagian: 132249

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 11.6 mOhm @ 4A, 10V,

Senarai harapan

Toshiba Semiconductor and Storage

TPH11006NL,LQ

bahagian bahagian: 147549

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 17A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 11.4 mOhm @ 8.5A, 10V,

Senarai harapan

Toshiba Semiconductor and Storage

TP86R203NL,LQ

bahagian bahagian: 195446

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 19A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 6.2 mOhm @ 9A, 10V,

Senarai harapan

Toshiba Semiconductor and Storage

TK20P04M1,RQ(S

bahagian bahagian: 189721

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 10A, 10V,

Senarai harapan

Toshiba Semiconductor and Storage

SSM6J212FE,LF

bahagian bahagian: 180699

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 40.7 mOhm @ 3A, 4.5V,

Senarai harapan

Toshiba Semiconductor and Storage

SSM3K15ACTC,L3F

bahagian bahagian: 168469

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4V, Rds On (Maks) @ Id, Vgs: 3.6 Ohm @ 10mA, 4V,

Senarai harapan

Toshiba Semiconductor and Storage

TPC8067-H,LQ(S

bahagian bahagian: 173926

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 4.5A, 10V,

Senarai harapan

Toshiba Semiconductor and Storage

SSM3K318R,LF

bahagian bahagian: 100090

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 107 mOhm @ 2A, 10V,

Senarai harapan

Toshiba Semiconductor and Storage

TPC8066-H,LQ(S

bahagian bahagian: 190514

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 16 mOhm @ 5.5A, 10V,

Senarai harapan

Toshiba Semiconductor and Storage

TPN13008NH,L1Q

bahagian bahagian: 180755

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 18A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 13.3 mOhm @ 9A, 10V,

Senarai harapan

Toshiba Semiconductor and Storage

SSM3J35AMFV,L3F

bahagian bahagian: 7230

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 250mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.2V, 4.5V, Rds On (Maks) @ Id, Vgs: 1.4 Ohm @ 150mA, 4.5V,

Senarai harapan

Toshiba Semiconductor and Storage

SSM3K7002KF,LF

bahagian bahagian: 169654

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 400mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 1.5 Ohm @ 100mA, 10V,

Senarai harapan

Toshiba Semiconductor and Storage

TPC8132,LQ(S

bahagian bahagian: 170665

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 3.5A, 10V,

Senarai harapan

Toshiba Semiconductor and Storage

SSM6K504NU,LF

bahagian bahagian: 129507

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 19.5 mOhm @ 4A, 10V,

Senarai harapan

Toshiba Semiconductor and Storage

TPC8134,LQ(S

bahagian bahagian: 7395

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 52 mOhm @ 2.5A, 10V,

Senarai harapan

Toshiba Semiconductor and Storage

SSM3J325F,LF

bahagian bahagian: 115358

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 150 mOhm @ 1A, 4.5V,

Senarai harapan

Toshiba Semiconductor and Storage

SSM3K72KFS,LF

bahagian bahagian: 7312

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 300mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 1.5 Ohm @ 100mA, 10V,

Senarai harapan

Toshiba Semiconductor and Storage

SSM6K341NU,LF

bahagian bahagian: 7275

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V, Rds On (Maks) @ Id, Vgs: 36 mOhm @ 4A, 10V,

Senarai harapan

Toshiba Semiconductor and Storage

TP89R103NL,LQ

bahagian bahagian: 119858

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 9.1 mOhm @ 7.5A, 10V,

Senarai harapan

Toshiba Semiconductor and Storage

SSM3K35AFS,LF

bahagian bahagian: 196668

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 250mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.2V, 4.5V, Rds On (Maks) @ Id, Vgs: 1.1 Ohm @ 150mA, 4.5V,

Senarai harapan

Toshiba Semiconductor and Storage

TPCC8093,L1Q

bahagian bahagian: 7348

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 21A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 5.8 mOhm @ 10.5A, 4.5V,

Senarai harapan

Toshiba Semiconductor and Storage

TPH6R30ANL,L1Q

bahagian bahagian: 7573

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 66A (Ta), 45A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 6.3 mOhm @ 22.5A, 10V,

Senarai harapan

Toshiba Semiconductor and Storage

TPC6110(TE85L,F,M)

bahagian bahagian: 181802

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A (Ta), Rds On (Maks) @ Id, Vgs: 56 mOhm @ 2.2A, 10V,

Senarai harapan

Toshiba Semiconductor and Storage

SSM3J112TU,LF

bahagian bahagian: 5773

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.1A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V, Rds On (Maks) @ Id, Vgs: 390 mOhm @ 500mA, 10V,

Senarai harapan

Toshiba Semiconductor and Storage

SSM3K37CT,L3F

bahagian bahagian: 164943

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 200mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V,

Senarai harapan

Toshiba Semiconductor and Storage

SSM6J505NU,LF

bahagian bahagian: 146525

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.2V, 4.5V, Rds On (Maks) @ Id, Vgs: 12 mOhm @ 4A, 4.5V,

Senarai harapan

Toshiba Semiconductor and Storage

SSM3J358R,LF

bahagian bahagian: 133378

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 8V, Rds On (Maks) @ Id, Vgs: 22.1 mOhm @ 6A, 8V,

Senarai harapan

Toshiba Semiconductor and Storage

SSM3K15ACT(TPL3)

bahagian bahagian: 197326

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4V, Rds On (Maks) @ Id, Vgs: 3.6 Ohm @ 10mA, 4V,

Senarai harapan

Toshiba Semiconductor and Storage

TPH3R704PL,L1Q

bahagian bahagian: 134761

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 92A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3.7 mOhm @ 46A, 10V,

Senarai harapan

Toshiba Semiconductor and Storage

TPC8065-H,LQ(S

bahagian bahagian: 171095

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 11.6 mOhm @ 6.5A, 10V,

Senarai harapan