Transistor - FET, MOSFET - Bujang | Produk Semikonduktor Diskrit | 21

TPC8092,LQ(S

bahagian bahagian: 100135

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 9 mOhm @ 7.5A, 10V,

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Toshiba Semiconductor and Storage

SSM3J36FS,LF

bahagian bahagian: 126552

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 330mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 1.31 Ohm @ 100mA, 4.5V,

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Toshiba Semiconductor and Storage

SSM3J35CT,L3F

bahagian bahagian: 5771

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.2V, 4V, Rds On (Maks) @ Id, Vgs: 8 Ohm @ 50mA, 4V,

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Toshiba Semiconductor and Storage

SSM3K15ACT,L3F

bahagian bahagian: 154142

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4V, Rds On (Maks) @ Id, Vgs: 3.6 Ohm @ 10mA, 4V,

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Toshiba Semiconductor and Storage

TPC8129,LQ(S

bahagian bahagian: 141142

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 4.5A, 10V,

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Toshiba Semiconductor and Storage

SSM3J56ACT,L3F

bahagian bahagian: 107046

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.4A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.2V, 4.5V, Rds On (Maks) @ Id, Vgs: 390 mOhm @ 800mA, 4.5V,

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Toshiba Semiconductor and Storage

TPN6R003NL,LQ

bahagian bahagian: 195389

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 27A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 6 mOhm @ 13.5A, 10V,

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Toshiba Semiconductor and Storage

SSM3K324R,LF

bahagian bahagian: 151670

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 55 mOhm @ 4A, 4.5V,

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Toshiba Semiconductor and Storage

SSM6H19NU,LF

bahagian bahagian: 184800

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 8V, Rds On (Maks) @ Id, Vgs: 185 mOhm @ 1A, 8V,

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Toshiba Semiconductor and Storage

TPC6111(TE85L,F,M)

bahagian bahagian: 154704

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 2.8A, 4.5V,

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Toshiba Semiconductor and Storage

TPN8R903NL,LQ

bahagian bahagian: 183096

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 8.9 mOhm @ 10A, 10V,

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Toshiba Semiconductor and Storage

SSM3K2615TU,LF

bahagian bahagian: 7271

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 3.3V, 10V, Rds On (Maks) @ Id, Vgs: 300 mOhm @ 1A, 10V,

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Toshiba Semiconductor and Storage

SSM3K15CT(TPL3)

bahagian bahagian: 112077

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4V, Rds On (Maks) @ Id, Vgs: 4 Ohm @ 10mA, 4V,

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Toshiba Semiconductor and Storage

TPN14006NH,L1Q

bahagian bahagian: 180682

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6.5V, 10V, Rds On (Maks) @ Id, Vgs: 14 mOhm @ 6.5A, 10V,

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Toshiba Semiconductor and Storage

SSM6J207FE,LF

bahagian bahagian: 104477

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.4A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V, Rds On (Maks) @ Id, Vgs: 251 mOhm @ 650mA, 10V,

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Toshiba Semiconductor and Storage

SSM3K56MFV,L3F

bahagian bahagian: 128522

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 800mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 235 mOhm @ 800mA, 4.5V,

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Toshiba Semiconductor and Storage

TPN22006NH,LQ

bahagian bahagian: 147480

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6.5V, 10V, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 4.5A, 10V,

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Toshiba Semiconductor and Storage

TPN1600ANH,L1Q

bahagian bahagian: 143024

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 17A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 16 mOhm @ 8.5A, 10V,

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Toshiba Semiconductor and Storage

SSM3K345R,LF

bahagian bahagian: 112097

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 33 mOhm @ 4A, 4.5V,

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Toshiba Semiconductor and Storage

SSM3J117TU,LF

bahagian bahagian: 180597

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 10V, Rds On (Maks) @ Id, Vgs: 117 mOhm @ 1A, 10V,

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Toshiba Semiconductor and Storage

TPN4R203NC,L1Q

bahagian bahagian: 167458

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 23A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 4.2 mOhm @ 11.5A, 10V,

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